OTP memory IP for GloFo’s 22nm FD-SOI process



Attopsemi’s  I-fuse OTP IP suits harsh applications such as automotive, 3D IC, and IoT applications, and can guarantee zero-program defects.

Features  of the I-fuse  include:
Limited program current below a catastrophic breaking point
Use of junction diode, instead of MOS, as a program selector in an OTP cell
Smaller cell improving program efficiency enabling program current reduction

Attopsemi develops and licenses fuse-based OTP memory IP for  CMOS process technologies from 0.7um to 7nm and beyond.


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