The annual event is the leading exhibition for power electronics, intelligent motion, renewable energy and energy management.

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Power Conversion Intelligent Motion 2017

Thursday 18 March 2017

PCIM: All-SiC 1,200V 600A power modules from Rohm
Compared with IGBTs, at a chip temperature of 150°C, the firm is claiming 64% reduction in switching losses.

PCIM: 1700V IGBT driver delivers 8A
“They are also ideal for the three-level topology photovoltaic inverters and photovoltaic arrays leveraging the new 1,500V DC bus standard,” said the firm.

PCIM: SiC mosfet driver reference from ADI and Microsemi
Microsemi and Analog Devices were showing a 5kV isolated SiC mosfet gate driver design at PCIM in Germany this week.

PCIM: Maxim power converter aims for safe power levels
The growing use of microprocessor-based control systems in industrial environments has highlighted to need to design in higher levels of reliability.

Wednesday 17 March 2017

PCIM: Dynex names new CEO
Dynex Semiconductor has named a new CEO following the stepping down of long time head Dr. Paul Taylor in January.

PCIM: UK-based Amantys develops next generation IGBT gate drive
Called NG Gate Drive, it has been designed to be compatible with IGBT modules known as LinPak, XHP, nHPD2 and SemiTrans20.

PCIM: Infineon adds PFC boost stage to motor module
An intelligent power module (IPM) which has a single switch boost power factor correction (PFC) stage and also integrates a 3 phase inverter in one package.

Tuesday 16 March 2017

PCIM: Fast charger tech for electric vehicles
Microsemi announces that its fast recovery DQ diode product family is now AEC-Q101 qualified for use in the automotive market, for electric vehicles.

PCIM: LEM current transducer steps up in accuracy
The 2000-S model transducer also has an extended operating temperature range of -40 to +85°C.

PCIM: half-bridge device has high and low side mosfet drivers
Diodes has introduced a range of gate drivers that feature a floating high-side driver to simplify the switching of two N-channel mosfets or two IGBTs in a half-bridge configuration.