Delivery of this heated ion implanter is expected by the end of 2018, and production release is planned during the first quarter of 2019 in time to meet projected near-term demand.
X-FAB was the first wafer foundry to offer SiC manufacturing on 6-inch wafers. This doubling of X-FAB’s SiC process capacity furthers its strategy to remain the premier 6-inch SiC wafer foundry, and demonstrates the Company’s commitment to SiC technology and the SiC foundry business model.
Advantages of X-FAB’s 6-inch SiC process capabilities for power semiconductors include superior high voltage operation, significantly lower transistor On-resistance, significantly lower transmission and switching losses, extended high temperature operation as high as 400°F/204°C, higher thermal conductivity, very high frequency operation, and lower parasitic capacitance.
X-FAB’s SiC process capabilities allow customers to realize high efficiency power semiconductor devices including high power MOSFETs, JFETs, and Schottky diodes.