Non-volatile OxRAM on multi-project wafers
[ad_1] “Leti’s integrated silicon memory platform is developed for backend memories and non-volatility associated with embedded designs,” said the lab. “The technology platform will be based on titanium-doped hafnium oxide [HfO2/Ti] active layers.” The OxRAM is part fo Leti’s Memory Advanced Demonstrator (MAD) future mask set, available on its 200mm CMOS line, with MPWs providingRead more about Non-volatile OxRAM on multi-project wafers[…]
