4DS’ shares have been put on a trading halt pending the raising of fresh capital.
The intention with Imec is to demonstrate the process with a 1Mbit test chip.
4DS has a development agreement with Western Digital subsidiary HGST to develop interface switching ReRAM based on 4DS’ metal oxide hetero-junction operation (MOHJ0) non-volatile memory.
4DS distinguishes its ReRAM from the Intel/Micron 3D Xpoint, from CBRAM from Adesto Technologies and from the silver-over-amorphous-silicon ReRAM from Crossbar, by not being a filamentary memory.
In the 4DS ReRAM switching takes place across the interface to a thin film layer of PrCaMnO3 (praseodymium calcium metal oxide).
This has more in common with the correlated-electron RAM (CeRAM) technology of Symetrix.