Spin Transfer Technologies samples ST-MRAM
[ad_1] The sample devices utilize 80nm perpendicular magnetic tunnel junctions (MTJs), the latest generation of MRAM technology. The company is delivering these devices on evaluation boards, so customers can easily apply patterns to the devices to assess their functionality and determine their suitability for embedding in their own products for non-volatile memory applications. Barry Hoberman,Read more about Spin Transfer Technologies samples ST-MRAM[…]
