Infineon puts SiC modules into volume production
[ad_1] “Silicon carbide has reached a tipping point: Taking cost-benefit analysis into account, it is ready for use in a variety of applications,” says Infineon’s Dr.Peter Wawer. The 1200 V SiC MOSFETs have been optimized to combine high reliability with performance. They show dynamic losses which are an order of magnitude lower than 1200 V siliconRead more about Infineon puts SiC modules into volume production[…]
